63-8349-83 ［Discontinued］IPG20N06S4L26ATMA1 Dual N-Channel MOSFET, 20 A, 60 V OptiMOS, 8-Pin TDSON Infineon IPG20N06S4L26ATMA1
Features
- Infineon OptiMOS™ Dual Power MOSFET
Spec
- Quantity:1set(5000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:20 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:46 mΩ
- Maximum Gate Threshold Voltage:2.2V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-16 V, +16 V
- Package Type:TDSON
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:33 W
- Minimum Operating Temperature:-55 °C
- CODE No.:166-0823
| Order No. | 63-8349-83 | |
|---|---|---|
| Model No. | IPG20N06S4L26ATMA1 | |
| Standard price |
JPY: 287,000
USD: 1,785.71
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(5000pieces) | |
|
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| Stock in Japan | - | |