63-8349-39 ［Discontinued］IPB180P04P4L02ATMA1 P-Channel MOSFET, 180 A, 40 V OptiMOS P, 7-Pin D2PAK Infineon IPB180P04P4L02ATMA1
Features
- Infineon OptiMOS™P P-Channel Power MOSFETs. The Infineon OptiMOS ™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Spec
- Quantity:1set(1000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:180 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:3.9 mΩ
- Maximum Gate Threshold Voltage:2.2V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-16 V, +16 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:150 W
- Typical Gate Charge @ Vgs:220 nC @ 10 V
- CODE No.:166-1130
| Order No. | 63-8349-39 | |
|---|---|---|
| Model No. | IPB180P04P4L02ATMA1 | |
| Standard price |
JPY: 414,000
USD: 2,575.91
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(1000pieces) | |
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| Stock in Japan | - | |