63-8348-82 [Discontinued]IPB117N20NFDATMA1 N-Channel MOSFET, 84 A, 200 V OptiMOS FD, 3-Pin D2PAK Infineon IPB117N20NFDATMA1
Features
- Infineon OptiMOS™ FD Power MOSFET
Spec
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:84 A
- Maximum Drain Source Voltage:200 V
- Maximum Drain Source Resistance:11.7 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:300 W
- Minimum Operating Temperature:-55 °C
- CODE No.:166-0877
| Order No. | 63-8348-82 | |
|---|---|---|
| Model No. | IPB117N20NFDATMA1 | |
| Standard price |
JPY: 843,000
USD: 5,245.15
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(1000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IPB117N20NFDATMA1 N-Channel MOSFET, 84 A, 200 V OptiMOS FD, 3-Pin D2PAK Infineon IPB117N20NFDATMA1](https://aimg.as-1.co.jp/c/63/8348/82/63834882.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)