63-8348-76 [Discontinued]IPA60R650CEXKSA1 N-Channel MOSFET, 9.9 A, 650 V CoolMOS CE, 3-Pin TO-220FP Infineon IPA60R650CEXKSA1
Features
- Infineon CoolMOS™ CE Power MOSFET
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:9.9 A
- Maximum Drain Source Voltage:650 V
- Maximum Drain Source Resistance:650 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-220FP
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:63 W
- Dimensions:10.65 x 4.9 x 16.15mm
- CODE No.:145-9178
| Order No. | 63-8348-76 | |
|---|---|---|
| Model No. | IPA60R650CEXKSA1 | |
| Standard price |
JPY: 5,220
USD: 32.48
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(50pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IPA60R650CEXKSA1 N-Channel MOSFET, 9.9 A, 650 V CoolMOS CE, 3-Pin TO-220FP Infineon IPA60R650CEXKSA1](https://aimg.as-1.co.jp/c/63/8348/76/63834876.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)