63-8348-58 ［Discontinued］IPD80P03P4L07ATMA1 P-Channel MOSFET, 80 A, 30 V OptiMOS P, 3-Pin DPAK Infineon IPD80P03P4L07ATMA1
Features
- Infineon OptiMOS™P P-Channel Power MOSFETs. The Infineon OptiMOS ™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Spec
- Quantity:1set(2500pieces)
- Channel Type:P
- Maximum Continuous Drain Current:80 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:12 mΩ
- Maximum Gate Threshold Voltage:2V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-16 V, +5 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:88 W
- Transistor Material:Si
- CODE No.:166-1147
| Order No. | 63-8348-58 | |
|---|---|---|
| Model No. | IPD80P03P4L07ATMA1 | |
| Standard price |
JPY: 224,000
USD: 1,404.13
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(2500pieces) | |
|
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| Stock in Japan | - | |