63-8348-33 Infineon 1200V 50A, Silicon Junction Diode, 2-Pin TO-220 IDP30E120XKSA1 IDP30E120XKSA1
Features
- Fast Switching Emitter Controlled Diodes, Infineon. The Infineon switching emitter controlled diodes are the Rapid 1 and the Rapid 2 families also the 600 V/1200 V Ultra-soft diodes. The diodes work in various applications from Telecom, UPS, welding, AC-DC and the Ultra-soft version works on motor drive applications up to 30 kHz.. Rapid 1 diode switches between 18kHz and 40kHz 1.35V temperature-stable forward voltage Ideal for Power Factor Correction (PFC) topologies The Rapid 2 diode switches between 40 kHz and 100 kHz Low reverse recovery charge: forward voltage ratio for BiC performance Low reverse recovery time Low turn-on losses on the boost switch Ultra-fast Diode 600 V/1200 V Emitter Controlled technology Qualified according to JEDEC Standard Good EMI behaviour Low conduction losses Easy paralleling
Spec
- Quantity:1set(50pieces)
- Diode Configuration:Single
- Number of Elements per Chip:1
- Peak Reverse Repetitive Voltage:1200V
- Mounting Type:Through Hole
- Package Type:TO-220
- Diode Technology:Silicon Junction
- Pin Count:2
- Maximum Forward Voltage Drop:2.15V
- Peak Reverse Recovery Time:380ns
- Peak Non-Repetitive Forward Surge Current:102A
- CODE No.:145-8584
| Order No. | 63-8348-33 | |
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| Model No. | IDP30E120XKSA1 | |
| Standard price |
JPY: 15,100
USD: 93.95
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(50pieces) | |
| Stock in Japan |
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| Supplier Stock |
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