63-8348-26 Infineon IGW50N65H5FKSA1 IGBT, 50 A 650 V, 3-Pin TO-247 IGW50N65H5FKSA1
Features
- Infineon TrenchStop IGBT Transistors, 600 and 650V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 600 to 650V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C
Spec
- Quantity:1set(30pieces)
- Maximum Continuous Collector Current:50 A
- Maximum Collector Emitter Voltage:650 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:305 W
- Package Type:TO-247
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Transistor Configuration:Single
- Length:16.13mm
- Width:5.21mm
- Height:21.1mm
- Dimensions:16.13 x 5.21 x 21.1mm
- Energy Rating:0.7mJ
- CODE No.:145-9169
| Order No. | 63-8348-26 | |
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| Model No. | IGW50N65H5FKSA1 | |
| Standard price |
JPY: 14,100
USD: 88.39
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(30pieces) | |
| Stock in Japan |
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| Supplier Stock |
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