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Infineon

63-8347-99　［Discontinued］Infineon IGB30N60H3ATMA1 IGBT, 30 A 600 V, 3+Tab-Pin D2PAK (TO-263)　IGB30N60H3ATMA1

Features

  • Infineon TrenchStop IGBT Transistors, 600 and 650V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 600 to 650V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C

Spec

  • Quantity:1set(1000pieces)
  • Maximum Continuous Collector Current:30 A
  • Maximum Collector Emitter Voltage:600 V
  • Maximum Gate Emitter Voltage:±20V
  • Maximum Power Dissipation:187 W
  • Package Type:D2PAK (TO-263)
  • Mounting Type:Surface Mount
  • Channel Type:N
  • Pin Count:3+Tab
  • Transistor Configuration:Single
  • Length:10.31mm
  • Width:9.45mm
  • Height:4.57mm
  • Dimensions:10.31 x 9.45 x 4.57mm
  • Minimum Operating Temperature:-40 °C
  • CODE No.:166-1187
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Order No. 63-8347-99
Model No. IGB30N60H3ATMA1
Standard price JPY: 210,000 USD: 1,306.62
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1set(1000pieces)
  Discontinued
Stock in Japan -

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