Name: 63-8347-81 ［Discontinued］IPB067N08N3GATMA1 N-Channel MOSFET, 80 A, 80 V OptiMOS 3, 3-Pin D2PAK Infineon IPB067N08N3GATMA1
Price: 976.85 USD

Features

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating

Spec

Quantity:1set(1000pieces)
Channel Type:N
Maximum Continuous Drain Current:80 A
Maximum Drain Source Voltage:80 V
Maximum Drain Source Resistance:12.3 mΩ
Maximum Gate Threshold Voltage:3.5V
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:D2PAK (TO-263)
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:136 W
Minimum Operating Temperature:-55 °C
CODE No.:166-1122

Order No.	63-8347-81
Model No.	IPB067N08N3GATMA1
Standard price	JPY: 157,000 USD: 976.85 Excange rate 1USD= 160.72JPY Valid price in Japan
Quantity	1set(1000pieces)

Stock in Japan	-