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ON Semiconductor

63-8340-81　NDS355AN N-Channel MOSFET, 1.7 A, 30 V, 3-Pin SOT-23 ON Semiconductor　NDS355AN

Features

  • Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Spec

  • Quantity:1set(3000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:1.7 A
  • Maximum Drain Source Voltage:30 V
  • Maximum Drain Source Resistance:230 mΩ
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:SOT-23
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:500 mW
  • Maximum Operating Temperature:+150 °C
  • CODE No.:166-1816
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Order No. 63-8340-81
Model No. NDS355AN
Standard price JPY: 121,000 USD: 752.86
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1set(3000pieces)
Stock in Japan
Supplier Stock

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