63-8334-60 [Discontinued]PHKD6N02LT,518 Dual N-Channel MOSFET, 10.9 A, 20 V, 8-Pin SOIC Nexperia PHKD6N02LT,518
Features
- Dual N-Channel MOSFET, Nexperia
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:10.9 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:20 mΩ
- Maximum Gate Threshold Voltage:1.5V
- Minimum Gate Threshold Voltage:0.5V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:4.17 W
- Length:5mm
- CODE No.:166-1584
| Order No. | 63-8334-60 | |
|---|---|---|
| Model No. | PHKD6N02LT,518 | |
| Standard price |
JPY: 267,000
USD: 1,673.67
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
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| Stock in Japan | - | |
![[Discontinued]PHKD6N02LT,518 Dual N-Channel MOSFET, 10.9 A, 20 V, 8-Pin SOIC Nexperia PHKD6N02LT,518](https://aimg.as-1.co.jp/c/63/8334/60/63833460.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)