63-8328-53 SI1012CR-T1-GE3 N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-416 Vishay SI1012CR-T1-GE3
Features
- N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
Spec
- Quantity:1set(20pieces)
- Channel Type:N
- Maximum Continuous Drain Current:630 mA
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:1.1 Ω
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOT-416 (SC-75A)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Maximum Power Dissipation:240 mW
- Dimensions:1.68 x 0.86 x 0.8mm
- CODE No.:787-9005
| Order No. | 63-8328-53 | |
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| Model No. | SI1012CR-T1-GE3 | |
| Standard price |
JPY: 850
USD: 5.33
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(20pieces) | |
| Stock in Japan |
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| Supplier Stock |
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