63-8328-52 SI1032R-T1-GE3 N-Channel MOSFET, 200 mA, 20 V, 3-Pin SOT-416 Vishay SI1032R-T1-GE3
Features
- N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:200 mA
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:9 Ω
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-6 V, +6 V
- Package Type:SOT-416 (SC-75A)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Maximum Power Dissipation:280 mW
- Minimum Operating Temperature:-55 °C
- CODE No.:165-7260
| Order No. | 63-8328-52 | |
|---|---|---|
| Model No. | SI1032R-T1-GE3 | |
| Standard price |
JPY: 102,000
USD: 634.64
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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