63-8317-09 ［Discontinued］IRLHS6342TRPBF N-Channel MOSFET, 8.7 A, 30 V HEXFET, 6-Pin PQFN Infineon IRLHS6342TRPBF
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［Discontinued］IRLHS6342TRPBF N-Channel MOSFET, 8.7 A, 30 V HEXFET, 6-Pin PQFN Infineon IRLHS6342TRPBF 63-8317-09 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
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Infineon
63-8317-09 ［Discontinued］IRLHS6342TRPBF N-Channel MOSFET, 8.7 A, 30 V HEXFET, 6-Pin PQFN Infineon IRLHS6342TRPBF
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特徴
- N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:8.7 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:19.5 mΩ
- Maximum Gate Threshold Voltage:1.1V
- Minimum Gate Threshold Voltage:0.5V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:PQFN
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.1 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-7467
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Order No.
63-8317-09
型番
IRLHS6342TRPBF
Standard price
JPY: 93,600
USD: 587.13
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity
1set(4000pieces)
Stock in Japan
-
63-8317-09 ［Discontinued］IRLHS6342TRPBF N-Channel MOSFET, 8.7 A, 30 V HEXFET, 6-Pin PQFN Infineon IRLHS6342TRPBF
特徴
- N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:8.7 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:19.5 mΩ
- Maximum Gate Threshold Voltage:1.1V
- Minimum Gate Threshold Voltage:0.5V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:PQFN
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.1 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-7467
| Order No. | 63-8317-09 | |
|---|---|---|
| 型番 | IRLHS6342TRPBF | |
| Standard price |
JPY: 93,600
USD: 587.13
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| Quantity | 1set(4000pieces) | |
|
|
||
| Stock in Japan | - | |