63-8312-38 ［Discontinued］IRF7507TRPBF Dual N/P-Channel MOSFET, 1.7 A, 2.4 A, 20 V HEXFET, 8-Pin MSOP Infineon IRF7507TRPBF
Features
- Dual N/P-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
Spec
- Quantity:1set(4000pieces)
- Channel Type:N, P
- Maximum Continuous Drain Current:1.7 A, 2.4 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:140 mΩ, 270 mΩ
- Maximum Gate Threshold Voltage:0.7V
- Minimum Gate Threshold Voltage:0.7V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:MSOP
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.25 W
- Number of Elements per Chip:2
- CODE No.:166-0905
| Order No. | 63-8312-38 | |
|---|---|---|
| Model No. | IRF7507TRPBF | |
| Standard price |
JPY: 237,000
USD: 1,474.61
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(4000pieces) | |
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| Stock in Japan | - | |