63-8311-66 ［Discontinued］IRLHM620TRPBF N-Channel MOSFET, 26 A, 20 V HEXFET, 8-Pin PQFN Infineon IRLHM620TRPBF
Features
- N-Channel Power MOSFET 12V to 25V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
SpecSpec class="init">
［Discontinued］IRLHM620TRPBF N-Channel MOSFET, 26 A, 20 V HEXFET, 8-Pin PQFN Infineon IRLHM620TRPBF 63-8311-66 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
Infineon
63-8311-66 ［Discontinued］IRLHM620TRPBF N-Channel MOSFET, 26 A, 20 V HEXFET, 8-Pin PQFN Infineon IRLHM620TRPBF
-
特徴
- N-Channel Power MOSFET 12V to 25V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:26 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:3.5 mΩ
- Maximum Gate Threshold Voltage:1.1V
- Minimum Gate Threshold Voltage:0.5V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:PQFN
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.7 W
- Typical Turn-Off Delay Time:57 ns
- CODE No.:165-7503
-
Order No.
63-8311-66
型番
IRLHM620TRPBF
標準価格
JPY: 240,000
USD: 1,493.28
Excange rate 1USD= 160.72JPY
Valid price in Japan
入り数
1set(4000pieces)
![<!--@[ia-1]@-->取扱停止<!--@/[ia-1]@-->](/en/asone/img/usestop_en_US.png?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)
在庫数
-
63-8311-66 ［Discontinued］IRLHM620TRPBF N-Channel MOSFET, 26 A, 20 V HEXFET, 8-Pin PQFN Infineon IRLHM620TRPBF
特徴
- N-Channel Power MOSFET 12V to 25V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:26 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:3.5 mΩ
- Maximum Gate Threshold Voltage:1.1V
- Minimum Gate Threshold Voltage:0.5V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:PQFN
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.7 W
- Typical Turn-Off Delay Time:57 ns
- CODE No.:165-7503
| Order No. | 63-8311-66 | |
|---|---|---|
| 型番 | IRLHM620TRPBF | |
| 標準価格 |
JPY: 240,000
USD: 1,493.28
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| 入り数 | 1set(4000pieces) | |
|
|
||
| 在庫数 | - | |