63-8306-62 IXFN102N30P N-Channel MOSFET, 86 A, 300 V HiperFET, Polar, 4-Pin SOT-227B IXYS IXFN102N30P
Features
- N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
Spec
- Quantity:1set(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:86 A
- Maximum Drain Source Voltage:300 V
- Maximum Drain Source Resistance:33 mΩ
- Maximum Gate Threshold Voltage:5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-227B
- Mounting Type:Panel Mount
- Pin Count:4
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:570 W
- Transistor Material:Si
- CODE No.:168-4467
| Order No. | 63-8306-62 | |
|---|---|---|
| Model No. | IXFN102N30P | |
| Standard price |
JPY: 50,400
USD: 315.93
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(10pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|