63-8305-81 [Discontinued]IXFP10N80P N-Channel MOSFET, 10 A, 800 V HiperFET, Polar, 3-Pin TO-220 IXYS IXFP10N80P
Features
- N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
Spec
- Quantity:1set(50pieces)
- Channel Type:N
- Maximum Continuous Drain Current:10 A
- Maximum Drain Source Voltage:800 V
- Maximum Drain Source Resistance:1.1 Ω
- Maximum Gate Threshold Voltage:5.5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:TO-220
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:300 W
- Number of Elements per Chip:1
- CODE No.:168-4482
| Order No. | 63-8305-81 | |
|---|---|---|
| Model No. | IXFP10N80P | |
| Standard price |
JPY: 22,480
USD: 141.01
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| Quantity | 1set(50pieces) | |
|
|
||
| Stock in Japan | - | |
![[Discontinued]IXFP10N80P N-Channel MOSFET, 10 A, 800 V HiperFET, Polar, 3-Pin TO-220 IXYS IXFP10N80P](https://aimg.as-1.co.jp/c/63/8305/81/63830581.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)