63-8305-68 [Discontinued]IXFH69N30P N-Channel MOSFET, 69 A, 300 V HiperFET, Polar, 3-Pin TO-247 IXYS IXFH69N30P
Features
- N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
Spec
- Quantity:1set(30pieces)
- Channel Type:N
- Maximum Continuous Drain Current:69 A
- Maximum Drain Source Voltage:300 V
- Maximum Drain Source Resistance:49 mΩ
- Maximum Gate Threshold Voltage:5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-247
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:500 W
- Dimensions:16.26 x 5.3 x 21.46mm
- CODE No.:168-4472
| Order No. | 63-8305-68 | |
|---|---|---|
| Model No. | IXFH69N30P | |
| Standard price |
JPY: 57,100
USD: 357.93
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(30pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IXFH69N30P N-Channel MOSFET, 69 A, 300 V HiperFET, Polar, 3-Pin TO-247 IXYS IXFH69N30P](https://aimg.as-1.co.jp/c/63/8305/68/63830568.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)