63-8305-62 IXFH110N10P N-Channel MOSFET, 110 A, 100 V HiperFET, Polar, 3-Pin TO-247 IXYS IXFH110N10P
Features
- N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
Spec
- Quantity:1set(30pieces)
- Channel Type:N
- Maximum Continuous Drain Current:110 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:15 mΩ
- Maximum Gate Threshold Voltage:5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-247
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:480 W
- Width:5.3mm
- CODE No.:168-4469
| Order No. | 63-8305-62 | |
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| Model No. | IXFH110N10P | |
| Standard price |
JPY: 35,100
USD: 218.39
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(30pieces) | |
| Stock in Japan |
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| Supplier Stock |
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