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IXYS

63-8301-02　［Discontinued］IXYS IXA60IF1200NA IGBT, 88 A 1200 V, 4-Pin SOT-227B　IXA60IF1200NA

FeaturesFeatures class="init"> ［Discontinued］IXYS IXA60IF1200NA IGBT, 88 A 1200 V, 4-Pin SOT-227B　IXA60IF1200NA 63-8301-02 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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取扱点数300万点
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IXYS

63-8301-02　［Discontinued］IXYS IXA60IF1200NA IGBT, 88 A 1200 V, 4-Pin SOT-227B　IXA60IF1200NA

Features

  • IGBT Discretes, IXYS XPT series. The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages. High power density and low VCE(sat) Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage Short circuit capability for 10usec Positive on-state voltage temperature coefficient Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes International standard and proprietary high voltage packages

Spec

  • Quantity:1piece
  • Maximum Continuous Collector Current:88 A
  • Maximum Collector Emitter Voltage:1200 V
  • Maximum Gate Emitter Voltage:±20V
  • Maximum Power Dissipation:290 W
  • Package Type:SOT-227B
  • Mounting Type:Surface Mount
  • Channel Type:N
  • Pin Count:4
  • Transistor Configuration:Single
  • Length:38.23mm
  • Width:25.25mm
  • Height:9.6mm
  • Dimensions:38.23 x 25.25 x 9.6mm
  • Minimum Operating Temperature:-40 °C
  • CODE No.:804-7612
  •  
Order No. 63-8301-02
Model No.Model No. class="init"> ［Discontinued］IXYS IXA60IF1200NA IGBT, 88 A 1200 V, 4-Pin SOT-227B　IXA60IF1200NA 63-8301-02 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
Cách sử dụng
Contact us
IXYS

63-8301-02　［Discontinued］IXYS IXA60IF1200NA IGBT, 88 A 1200 V, 4-Pin SOT-227B　IXA60IF1200NA

特徴

  • IGBT Discretes, IXYS XPT series. The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages. High power density and low VCE(sat) Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage Short circuit capability for 10usec Positive on-state voltage temperature coefficient Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes International standard and proprietary high voltage packages

仕様

  • Quantity:1piece
  • Maximum Continuous Collector Current:88 A
  • Maximum Collector Emitter Voltage:1200 V
  • Maximum Gate Emitter Voltage:±20V
  • Maximum Power Dissipation:290 W
  • Package Type:SOT-227B
  • Mounting Type:Surface Mount
  • Channel Type:N
  • Pin Count:4
  • Transistor Configuration:Single
  • Length:38.23mm
  • Width:25.25mm
  • Height:9.6mm
  • Dimensions:38.23 x 25.25 x 9.6mm
  • Minimum Operating Temperature:-40 °C
  • CODE No.:804-7612
  •  
アズワン品番 63-8301-02
型番 IXA60IF1200NA
Standard price JPY: 8,960 USD: 56.20
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity 1piece
  Discontinued
Stock in Japan -

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