63-8300-99 IXFN80N60P3 N-Channel MOSFET, 66 A, 600 V HiperFET, Polar3, 4-Pin SOT-227B IXYS IXFN80N60P3
Features
- N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series. A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:66 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:70 mΩ
- Maximum Gate Threshold Voltage:5V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:SOT-227B
- Mounting Type:Panel Mount
- Pin Count:4
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:960 W
- Typical Gate Charge @ Vgs:190 nC @ 10 V
- CODE No.:804-7603
| Order No. | 63-8300-99 | |
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| Model No. | IXFN80N60P3 | |
| Standard price |
JPY: 7,220
USD: 44.92
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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