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• 63-8300-94 IXFN100N50Q3 N-Channel MOSFET, 82 A, 500 V HiperFET, Q3-Class, 4-Pin SOT-227B IXYS　IXFN100N50Q3

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• 63-8300-94 IXFN100N50Q3 N-Channel MOSFET, 82 A, 500 V HiperFET, Q3-Class, 4-Pin SOT-227B IXYS　IXFN100N50Q3

IXYS

63-8300-94　IXFN100N50Q3 N-Channel MOSFET, 82 A, 500 V HiperFET, Q3-Class, 4-Pin SOT-227B IXYS　IXFN100N50Q3

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Features

• N-channel Power MOSFET, IXYS HiperFET™ Q3 Series. The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode Low RDS(on) and QG (gate charge) Low intrinsic gate resistance Industry standard packages Low package inductance High power density

Spec

• Quantity:1piece
• Channel Type:N
• Maximum Continuous Drain Current:82 A
• Maximum Drain Source Voltage:500 V
• Maximum Drain Source Resistance:49 mΩ
• Maximum Gate Threshold Voltage:6.5V
• Maximum Gate Source Voltage:-30 V, +30 V
• Package Type:SOT-227B
• Mounting Type:Panel Mount
• Pin Count:4
• Channel Mode:Enhancement
• Category:Power MOSFET
• Maximum Power Dissipation:960 W
• Typical Turn-On Delay Time:40 ns
• CODE No.:804-7565
•  

Order No.	63-8300-94
Model No.	IXFN100N50Q3
Standard price	JPY: 12,500 USD: 78.36 Excange rate 1USD= 159.53JPY Valid price in Japan
QuantityQuantityass="init"> 取扱点数300万点 How to use English China Indonesia Korea Thailand Vietnam Contact us すべてのカテゴリ すべてのカテゴリ Lab Instruments & Supplies Factory Work Tools & Supplies Clean Room/Anti Static Supplies Medical, Nursing & Care Products Food Sanitation & Inspection Office Supplies and Stationery Emergency Supplies Education, Learning Supplies Specially Ordered Item Contact us Quote Other Requests AXEL GLOBAL カテゴリ一覧 Lab Instruments & Supplies Electronic/Electrical Parts and Controll Equipments Electronics Components, Power & Connectors Semiconductors Discrete Semiconductors 63-8300-94 IXFN100N50Q3 N-Channel MOSFET, 82 A, 500 V HiperFET, Q3-Class, 4-Pin SOT-227B IXYS　IXFN100N50Q3 AXEL GLOBAL カテゴリ一覧 Lab Instruments & Supplies Electronic/Electrical Parts and Controll Equipments RS Components 63-8300-94 IXFN100N50Q3 N-Channel MOSFET, 82 A, 500 V HiperFET, Q3-Class, 4-Pin SOT-227B IXYS　IXFN100N50Q3 IXYS 63-8300-94　IXFN100N50Q3 N-Channel MOSFET, 82 A, 500 V HiperFET, Q3-Class, 4-Pin SOT-227B IXYS　IXFN100N50Q3 印刷 PDF 特徴 N-channel Power MOSFET, IXYS HiperFET™ Q3 Series. The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode Low RDS(on) and QG (gate charge) Low intrinsic gate resistance Industry standard packages Low package inductance High power density 仕様 Quantity:1piece Channel Type:N Maximum Continuous Drain Current:82 A Maximum Drain Source Voltage:500 V Maximum Drain Source Resistance:49 mΩ Maximum Gate Threshold Voltage:6.5V Maximum Gate Source Voltage:-30 V, +30 V Package Type:SOT-227B Mounting Type:Panel Mount Pin Count:4 Channel Mode:Enhancement Category:Power MOSFET Maximum Power Dissipation:960 W Typical Turn-On Delay Time:40 ns CODE No.:804-7565   アズワン品番 63-8300-94 型番 IXFN100N50Q3 標準価格 JPY: 12,500 USD: 78.36 Excange rate 1USD= 159.53JPY Valid price in Japan Quantity 1piece 在庫数 Supplier Stock Quote Other Requests This page is the page of IXFN100N50Q3 N-Channel MOSFET, 82 A, 500 V HiperFET, Q3-Class, 4-Pin SOT-227B IXYS sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.ASONEs="init"> Listed products : 3 milion products How to use English China Indonesia Korea Thailand Vietnam Contact us All Categories All Categories Lab Instruments & Supplies Factory Work Tools & Supplies Clean Room/Anti Static Supplies Medical, Nursing & Care Products Food Sanitation & Inspection Office Supplies and Stationery Emergency Supplies Education, Learning Supplies Specially Ordered Item Contact us Quote Other Requests AXEL GLOBAL Categories Lab Instruments & Supplies Electronic/Electrical Parts and Controll Equipments Electronics Components, Power & Connectors Semiconductors Discrete Semiconductors 63-8300-94 IXFN100N50Q3 N-Channel MOSFET, 82 A, 500 V HiperFET, Q3-Class, 4-Pin SOT-227B IXYS　IXFN100N50Q3 AXEL GLOBAL Categories Lab Instruments & Supplies Electronic/Electrical Parts and Controll Equipments RS Components 63-8300-94 IXFN100N50Q3 N-Channel MOSFET, 82 A, 500 V HiperFET, Q3-Class, 4-Pin SOT-227B IXYS　IXFN100N50Q3 IXYS 63-8300-94　IXFN100N50Q3 N-Channel MOSFET, 82 A, 500 V HiperFET, Q3-Class, 4-Pin SOT-227B IXYS　IXFN100N50Q3 Print PDF Features N-channel Power MOSFET, IXYS HiperFET™ Q3 Series. The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode Low RDS(on) and QG (gate charge) Low intrinsic gate resistance Industry standard packages Low package inductance High power density Spec Quantity:1piece Channel Type:N Maximum Continuous Drain Current:82 A Maximum Drain Source Voltage:500 V Maximum Drain Source Resistance:49 mΩ Maximum Gate Threshold Voltage:6.5V Maximum Gate Source Voltage:-30 V, +30 V Package Type:SOT-227B Mounting Type:Panel Mount Pin Count:4 Channel Mode:Enhancement Category:Power MOSFET Maximum Power Dissipation:960 W Typical Turn-On Delay Time:40 ns CODE No.:804-7565   Order No. 63-8300-94 Model No. IXFN100N50Q3 Standard price JPY: 12,500 USD: 78.36 Excange rate 1USD= 159.53JPY Valid price in Japan Quantity 1piece Stock in Japan Supplier Stock Quote Other Requests This page is the page of IXFN100N50Q3 N-Channel MOSFET, 82 A, 500 V HiperFET, Q3-Class, 4-Pin SOT-227B IXYS sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.