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ON Semiconductor

63-8298-75　FDP2D3N10C N-Channel MOSFET, 222 A, 100 V, 3-Pin TO-220 ON Semiconductor　FDP2D3N10C

Spec

  • Quantity:1set(800pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:222 A
  • Maximum Drain Source Voltage:100 V
  • Maximum Drain Source Resistance:2.3 mΩ
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:±20 V
  • Package Type:TO-220
  • Mounting Type:Through Hole
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:214 W
  • Minimum Operating Temperature:-55 °C
  • CODE No.:181-1858
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Order No. 63-8298-75
Model No. FDP2D3N10C
Standard price JPY: 680,000 USD: 4,262.52
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(800pieces)
Stock in Japan
Supplier Stock

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