63-8272-56 [Discontinued]DMT6018LDR-13 Dual N-Channel MOSFET, 11.4 (Steady) A, 9.1 (State) A, 60 V, 8-Pin V-DFN3030 Diodes Inc DMT6018LDR-13
Features
- MOSFET
Spec
- Quantity:1set(10000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:11.4 (Steady) A, 9.1 (State) A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:26 mΩ
- Maximum Gate Threshold Voltage:3V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:±20 V
- Package Type:V-DFN3030
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.9 W
- Typical Turn-Off Delay Time:10.8 ns
- CODE No.:182-6931
| Order No. | 63-8272-56 | |
|---|---|---|
| Model No. | DMT6018LDR-13 | |
| Standard price |
JPY: 1,088,000
USD: 6,820.03
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(10000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]DMT6018LDR-13 Dual N-Channel MOSFET, 11.4 (Steady) A, 9.1 (State) A, 60 V, 8-Pin V-DFN3030 Diodes Inc DMT6018LDR-13](https://aimg.as-1.co.jp/c/63/8272/56/63812764.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)