63-8220-62 ［Discontinued］SiDR622DP-T1-GE3 N-Channel MOSFET, 64.6 A, 150 V TrenchFET, 8-Pin SO-8 Vishay Siliconix SiDR622DP-T1-GE3
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:64.6 A
- Maximum Drain Source Voltage:150 V
- Maximum Drain Source Resistance:20 mΩ
- Maximum Gate Threshold Voltage:4.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:±20 V
- Package Type:SO-8
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:125 W
- Forward Transconductance:33S
- CODE No.:178-3946
| Order No. | 63-8220-62 | |
|---|---|---|
| Model No. | SiDR622DP-T1-GE3 | |
| Standard price |
JPY: 2,040
USD: 12.79
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
|
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| Stock in Japan | - | |