63-8220-61 SiSS12DN-T1-GE3 N-Channel MOSFET, 60 A, 40 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSS12DN-T1-GE3
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:60 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:2 mΩ
- Maximum Gate Threshold Voltage:1.1V
- Minimum Gate Threshold Voltage:2.4V
- Maximum Gate Source Voltage:-16 V, +20 V
- Package Type:1212
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:65.7 W
- Typical Turn-On Delay Time:28 ns
- CODE No.:178-3920
| Order No. | 63-8220-61 | |
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| Model No. | SiSS12DN-T1-GE3 | |
| Standard price |
JPY: 2,270
USD: 14.23
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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