63-8220-59 ［Discontinued］SiSH129DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSH129DN-T1-GE3
Spec
- Quantity:1bag(25pieces)
- Channel Type:P
- Maximum Continuous Drain Current:35 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:20 mΩ
- Maximum Gate Threshold Voltage:2.8V
- Minimum Gate Threshold Voltage:1.5V
- Maximum Gate Source Voltage:±20 V
- Package Type:1212
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:52.1 W
- Maximum Operating Temperature:+150 °C
- CODE No.:178-3869
| Order No. | 63-8220-59 | |
|---|---|---|
| Model No. | SiSH129DN-T1-GE3 | |
| Standard price |
JPY: 2,410
USD: 15.11
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(25pieces) | |
|
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| Stock in Japan | - | |