63-8220-57 SQS966ENW-T1_GE3 Dual N-Channel MOSFET, 6 A, 60 V TrenchFET, 8-Pin 1212 Vishay Siliconix SQS966ENW-T1_GE3
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:6 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:60 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1.5V
- Maximum Gate Source Voltage:±20 V
- Package Type:1212
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:27.8 W
- Maximum Operating Temperature:+175 °C
- CODE No.:178-3727
| Order No. | 63-8220-57 | |
|---|---|---|
| Model No. | SQS966ENW-T1_GE3 | |
| Standard price |
JPY: 254,000
USD: 1,592.18
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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