63-8220-56 ［Discontinued］SQS944ENW-T1_GE3 Dual N-Channel MOSFET, 6 A, 40 V TrenchFET, 8-Pin 1212 Vishay Siliconix SQS944ENW-T1_GE3
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:6 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:40 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1.5V
- Maximum Gate Source Voltage:±20 V
- Package Type:1212
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:27.8 W
- Typical Turn-On Delay Time:7.6 ns
- CODE No.:178-3726
| Order No. | 63-8220-56 | |
|---|---|---|
| Model No. | SQS944ENW-T1_GE3 | |
| Standard price |
JPY: 272,000
USD: 1,705.01
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |