63-8220-55 SiSS12DN-T1-GE3 N-Channel MOSFET, 60 A, 40 V TrenchFET, 8-Pin 1212 Vishay Siliconix SiSS12DN-T1-GE3
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:60 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:2 mΩ
- Maximum Gate Threshold Voltage:1.1V
- Minimum Gate Threshold Voltage:2.4V
- Maximum Gate Source Voltage:-16 V, +20 V
- Package Type:1212
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:65.7 W
- Minimum Operating Temperature:-55 °C
- CODE No.:178-3701
| Order No. | 63-8220-55 | |
|---|---|---|
| Model No. | SiSS12DN-T1-GE3 | |
| Standard price |
JPY: 393,000
USD: 2,463.49
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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