63-8220-53 ［Discontinued］SiR112DP-T1-RE3 N-Channel MOSFET, 133 A, 40 V TrenchFET, 8-Pin SO-8 Vishay Siliconix SiR112DP-T1-RE3
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:133 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:2 mΩ
- Maximum Gate Threshold Voltage:1.1V
- Minimum Gate Threshold Voltage:2.4V
- Maximum Gate Source Voltage:-16 V, +20 V
- Package Type:SO-8
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:62.5 W
- Dimensions:5.99 x 5 x 1.07mm
- CODE No.:178-3686
| Order No. | 63-8220-53 | |
|---|---|---|
| Model No. | SiR112DP-T1-RE3 | |
| Standard price |
JPY: 242,000
USD: 1,516.96
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |