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Vishay Siliconix

63-8220-53　［Discontinued］SiR112DP-T1-RE3 N-Channel MOSFET, 133 A, 40 V TrenchFET, 8-Pin SO-8 Vishay Siliconix　SiR112DP-T1-RE3

仕様

  • Quantity:1set(3000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:133 A
  • Maximum Drain Source Voltage:40 V
  • Maximum Drain Source Resistance:2 mΩ
  • Maximum Gate Threshold Voltage:1.1V
  • Minimum Gate Threshold Voltage:2.4V
  • Maximum Gate Source Voltage:-16 V, +20 V
  • Package Type:SO-8
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:62.5 W
  • Dimensions:5.99 x 5 x 1.07mm
  • CODE No.:178-3686
  •  
アズワン品番 63-8220-53
型番 SiR112DP-T1-RE3
標準価格 JPY: 242,000 USD: 1,505.72
Excange rate 1USD= 160.72JPY
Valid price in Japan
入り数 1set(3000pieces)
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在庫数 -

[$1]［Discontinued］SiR112DP-T1-RE3 N-Channel MOSFET, 133 A, 40 V TrenchFET, 8-Pin SO-8 Vishay Siliconix[/$1]