63-8187-08 ［Discontinued］MOSFET P-Ch 30V 8A HEXFET SOIC8 SI4435DYTRPBF
特徴
- P Channel Power MOSFET 30 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include a P channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge.
- Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
仕様
- Quantity:1bag(10pieces)
- P-Channel Power MOSFET 30V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
- CODE No.:171-1913
| アズワン品番 | 63-8187-08 | |
|---|---|---|
| 型番 | SI4435DYTRPBF | |
| 標準価格 |
JPY: 1,370
USD: 8.59
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| 入り数 | 1bag(10pieces) | |
![<!--@[ia-1]@-->取扱停止<!--@/[ia-1]@-->](/en/asone/img/usestop_en_US.png?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1){kind=small}
|
||
| 在庫数 | - | |