F-RAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption
Spec
Quantity:1set(234pieces)
Memory Size:1Mbit
Organisation:128K x 8 bit
Interface Type:Parallel
Maximum Random Access Time:60ns
Mounting Type:Surface Mount
Package Type:TSOP
Pin Count:32
Dimensions:11.9 x 8.1 x 1.05mm
Length:11.9mm
Width:8.1mm
Height:1.05mm
Maximum Operating Temperature:+85 °C
Minimum Operating Temperature:-40 °C
CODE No.:171-0960
Order No.Order No.ss="init">
［Discontinued］Cypress Semiconductor FM28V100-TG Parallel FRAM Memory, 1Mbit, 60ns 32-Pin TSOP FM28V100-TG 63-8181-11 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
F-RAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption
