63-8178-37 ［Discontinued］Littelfuse NGB8207ABNT4G IGBT, 50 A 365 V, 3-Pin D2PAK (TO-263) NGB8207ABNT4G
Features
- IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Spec
- Quantity:1set(800pieces)
- Maximum Continuous Collector Current:50 A
- Maximum Collector Emitter Voltage:365 V
- Maximum Gate Emitter Voltage:±15V
- Maximum Power Dissipation:165 W
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Channel Type:N
- Pin Count:3
- Transistor Configuration:Single
- Length:10.29mm
- Width:9.65mm
- Height:4.83mm
- Dimensions:10.29 x 9.65 x 4.83mm
- Minimum Operating Temperature:-55 °C
- CODE No.:171-0128
| Order No. | 63-8178-37 | |
|---|---|---|
| Model No. | NGB8207ABNT4G | |
| Standard price |
JPY: 294,000
USD: 1,829.27
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(800pieces) | |
|
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| Stock in Japan | - | |