63-8165-99 SQJ412EP-T1_GE3 N-Channel MOSFET, 32 A, 40 V SQ Rugged, 5-Pin PowerPAK SO-8L Vishay SQJ412EP-T1_GE3
Features
- AEC-Q101. N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor. The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability. Advantages of SQ Rugged Series MOSFETs. AEC-Q101 qualified Junction temperature up to +175°C Low on-resistance n- and p-channel TrenchFET® technologies Innovative space-saving package options
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:32 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:8.5 mΩ
- Minimum Gate Threshold Voltage:1.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PowerPAK SO-8L
- Mounting Type:Surface Mount
- Pin Count:5
- Channel Mode:Enhancement
- Maximum Power Dissipation:83 W
- Minimum Operating Temperature:-55 °C
- CODE No.:170-8303
| Order No. | 63-8165-99 | |
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| Model No. | SQJ412EP-T1_GE3 | |
| Standard price |
JPY: 639,000
USD: 4,005.52
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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