63-8165-96 [Discontinued]SQ4946AEY-T1_GE3 Dual N-Channel MOSFET, 7 A, 60 V, 8-Pin SOIC Vishay SQ4946AEY-T1_GE3
Features
- Dual N-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:7 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:81 mΩ
- Minimum Gate Threshold Voltage:1.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Maximum Power Dissipation:4 W
- Number of Elements per Chip:2
- CODE No.:170-8299
| Order No. | 63-8165-96 | |
|---|---|---|
| Model No. | SQ4946AEY-T1_GE3 | |
| Standard price |
JPY: 184,000
USD: 1,153.39
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SQ4946AEY-T1_GE3 Dual N-Channel MOSFET, 7 A, 60 V, 8-Pin SOIC Vishay SQ4946AEY-T1_GE3](https://aimg.as-1.co.jp/c/63/8165/96/63812764.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)