63-8165-93 ［Discontinued］SQJ960EP-T1_GE3 Dual N-Channel MOSFET, 8 A, 60 V, 8-Pin PowerPAK SO Vishay SQJ960EP-T1_GE3
Features
- Dual N-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:8 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:84 mΩ
- Minimum Gate Threshold Voltage:1.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PowerPAK SO
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Maximum Power Dissipation:34 W
- Typical Gate Charge @ Vgs:13 nC @ 10 V
- CODE No.:170-8296
| Order No. | 63-8165-93 | |
|---|---|---|
| Model No. | SQJ960EP-T1_GE3 | |
| Standard price |
JPY: 338,000
USD: 2,118.72
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |