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63-8135-53 STD1NK60-1 N-Channel MOSFET, 1 A, 600 V MDmesh, SuperMESH, 3-Pin IPAK STMicroelectronics　STD1NK60-1 【AXEL GLOBAL】 アズワン

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STMicroelectronics

63-8135-53　STD1NK60-1 N-Channel MOSFET, 1 A, 600 V MDmesh, SuperMESH, 3-Pin IPAK STMicroelectronics　STD1NK60-1

Features

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

Spec

Quantity:1set(75pieces)
Channel Type:N
Maximum Continuous Drain Current:1 A
Maximum Drain Source Voltage:600 V
Maximum Drain Source Resistance:8.5 Ω
Maximum Gate Threshold Voltage:3.7V
Minimum Gate Threshold Voltage:2.25V
Maximum Gate Source Voltage:-30 V, +30 V
Package Type:IPAK (TO-251)
Mounting Type:Through Hole
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:30 W
Typical Turn-On Delay Time:6.5 ns
CODE No.:168-7564

Order No.Order No.ss="init"> 63-8135-53 STD1NK60-1 N-Channel MOSFET, 1 A, 600 V MDmesh, SuperMESH, 3-Pin IPAK STMicroelectronics　STD1NK60-1 【AXEL GLOBAL】 アズワン

取扱点数300万点

How to use

Quote Other Requests

STMicroelectronics

63-8135-53　STD1NK60-1 N-Channel MOSFET, 1 A, 600 V MDmesh, SuperMESH, 3-Pin IPAK STMicroelectronics　STD1NK60-1

印刷

特徴

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

仕様

Quantity:1set(75pieces)
Channel Type:N
Maximum Continuous Drain Current:1 A
Maximum Drain Source Voltage:600 V
Maximum Drain Source Resistance:8.5 Ω
Maximum Gate Threshold Voltage:3.7V
Minimum Gate Threshold Voltage:2.25V
Maximum Gate Source Voltage:-30 V, +30 V
Package Type:IPAK (TO-251)
Mounting Type:Through Hole
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:30 W
Typical Turn-On Delay Time:6.5 ns
CODE No.:168-7564

アズワン品番	63-8135-53
Model No.	STD1NK60-1
標準価格	JPY: 8,400 USD: 52.27 Excange rate 1USD= 160.72JPY Valid price in Japan
Quantity	1set(75pieces)
Stock in Japan
Supplier Stock

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