63-8134-22 ［Discontinued］STH80N10F7-2 N-Channel MOSFET, 80 A, 100 V STripFET H7, 3-Pin H2PAK-2 STMicroelectronics STH80N10F7-2
Features
- N-Channel STripFET™ H7 Series, STMicroelectronics. STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Spec
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:80 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:9.5 mΩ
- Maximum Gate Threshold Voltage:4.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:H2PAK-2
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:110 W
- Minimum Operating Temperature:-55 °C
- CODE No.:168-7108
| Order No. | 63-8134-22 | |
|---|---|---|
| Model No. | STH80N10F7-2 | |
| Standard price |
JPY: 140,000
USD: 877.58
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(1000pieces) | |
|
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| Stock in Japan | - | |