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ON Semiconductor

63-8117-85　FDC6561AN Dual N-Channel MOSFET, 2.5 A, 30 V PowerTrench, 6-Pin SOT-23 ON Semiconductor　FDC6561AN

Features

  • PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor. ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies. The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Spec

  • Quantity:1set(3000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:2.5 A
  • Maximum Drain Source Voltage:30 V
  • Maximum Drain Source Resistance:152 mΩ
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:SOT-23
  • Mounting Type:Surface Mount
  • Pin Count:6
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:960 mW
  • Minimum Operating Temperature:-55 °C
  • CODE No.:166-2973
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Order No. 63-8117-85
Model No. FDC6561AN
Standard price JPY: 149,000 USD: 933.99
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(3000pieces)
Stock in Japan
Supplier Stock

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