63-8117-83 FDC6305N Dual N-Channel MOSFET, 2.7 A, 20 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC6305N
Features
- PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor. ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies. The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:2.7 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:128 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:960 mW
- Transistor Material:Si
- CODE No.:166-2698
| Order No. | 63-8117-83 | |
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| Model No. | FDC6305N | |
| Standard price |
JPY: 143,000
USD: 896.38
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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