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63-8117-80 FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
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63-8117-80 FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
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  • 63-8117-80 FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P
ON Semiconductor

63-8117-80 FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P

  • PrintPrintlass="init"> 63-8117-80 FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    取扱点数300万点
    How to use
    Cách sử dụng
    Contact us
    すべてのカテゴリ
    Contact us
    Quote Other Requests
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
    • Electronic/Electrical Parts and Controll Equipments
    • Electronics Components, Power & Connectors
    • Semiconductors
    • Discrete Semiconductors
    • 63-8117-80 FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
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    • 63-8117-80 FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P
    ON Semiconductor

    63-8117-80 FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P

    • 印刷
    • PDF
    • FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P

    Features

    • PowerTrench® P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

    SpecSpec class="init"> 63-8117-80 FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    取扱点数300万点
    How to use
    Cách sử dụng
    Contact us
    すべてのカテゴリ
    Contact us
    Quote Other Requests
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
    • Electronic/Electrical Parts and Controll Equipments
    • Electronics Components, Power & Connectors
    • Semiconductors
    • Discrete Semiconductors
    • 63-8117-80 FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P
    • AXEL GLOBAL
    • カテゴリ一覧
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    • 63-8117-80 FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P
    ON Semiconductor

    63-8117-80 FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P

    • 印刷
    • PDF
    • FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P

    特徴

    • PowerTrench® P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

    仕様

    • Quantity:1set(3000pieces)
    • Channel Type:P
    • Maximum Continuous Drain Current:6 A
    • Maximum Drain Source Voltage:12 V
    • Maximum Drain Source Resistance:53 mΩ
    • Minimum Gate Threshold Voltage:0.4V
    • Maximum Gate Source Voltage:-8 V, +8 V
    • Package Type:SOT-23
    • Mounting Type:Surface Mount
    • Pin Count:6
    • Channel Mode:Enhancement
    • Category:Power MOSFET
    • Maximum Power Dissipation:1.6 W
    • Minimum Operating Temperature:-55 °C
    • CODE No.:166-2690
    •  
    Order No.Order No.ss="init"> 63-8117-80 FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    取扱点数300万点
    How to use
    Cách sử dụng
    Contact us
    すべてのカテゴリ
    Contact us
    Quote Other Requests
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
    • Electronic/Electrical Parts and Controll Equipments
    • Electronics Components, Power & Connectors
    • Semiconductors
    • Discrete Semiconductors
    • 63-8117-80 FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
    • Electronic/Electrical Parts and Controll Equipments
    • RS Components
    • 63-8117-80 FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P
    ON Semiconductor

    63-8117-80 FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P

    • 印刷
    • PDF
    • FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P

    特徴

    • PowerTrench® P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

    仕様

    • Quantity:1set(3000pieces)
    • Channel Type:P
    • Maximum Continuous Drain Current:6 A
    • Maximum Drain Source Voltage:12 V
    • Maximum Drain Source Resistance:53 mΩ
    • Minimum Gate Threshold Voltage:0.4V
    • Maximum Gate Source Voltage:-8 V, +8 V
    • Package Type:SOT-23
    • Mounting Type:Surface Mount
    • Pin Count:6
    • Channel Mode:Enhancement
    • Category:Power MOSFET
    • Maximum Power Dissipation:1.6 W
    • Minimum Operating Temperature:-55 °C
    • CODE No.:166-2690
    •  
    アズワン品番 63-8117-80
    Model No. FDC606P
    標準価格 JPY: 189,000 USD: 1,184.73
    Excange rate 1USD= 159.53JPY
    Valid price in Japan
    Quantity 1set(3000pieces)
    Stock in JapanStock in Japanass="init"> 63-8117-80 FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    取扱点数300万点
    How to use
    Cách sử dụng
    Contact us
    すべてのカテゴリ
    Contact us
    Quote Other Requests
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
    • Electronic/Electrical Parts and Controll Equipments
    • Electronics Components, Power & Connectors
    • Semiconductors
    • Discrete Semiconductors
    • 63-8117-80 FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
    • Electronic/Electrical Parts and Controll Equipments
    • RS Components
    • 63-8117-80 FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P
    ON Semiconductor

    63-8117-80 FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P

    • 印刷
    • PDF
    • FDC606P P-Channel MOSFET, 6 A, 12 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC606P

    特徴

    • PowerTrench® P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

    仕様

    • Quantity:1set(3000pieces)
    • Channel Type:P
    • Maximum Continuous Drain Current:6 A
    • Maximum Drain Source Voltage:12 V
    • Maximum Drain Source Resistance:53 mΩ
    • Minimum Gate Threshold Voltage:0.4V
    • Maximum Gate Source Voltage:-8 V, +8 V
    • Package Type:SOT-23
    • Mounting Type:Surface Mount
    • Pin Count:6
    • Channel Mode:Enhancement
    • Category:Power MOSFET
    • Maximum Power Dissipation:1.6 W
    • Minimum Operating Temperature:-55 °C
    • CODE No.:166-2690
    •  
    アズワン品番 63-8117-80
    型番 FDC606P
    標準価格 JPY: 189,000 USD: 1,184.73
    Excange rate 1USD= 159.53JPY
    Valid price in Japan
    入り数 1set(3000pieces)
    在庫数
    Supplier Stock

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