63-8117-73 FDC610PZ P-Channel MOSFET, 4.9 A, 30 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC610PZ
Features
- PowerTrench® P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
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63-8117-73 FDC610PZ P-Channel MOSFET, 4.9 A, 30 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC610PZ
-
Features
- PowerTrench® P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:4.9 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:75 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.6 W
- Minimum Operating Temperature:-55 °C
- CODE No.:166-1609
-
Order No.
63-8117-73
Model No.
FDC610PZ
Standard price
JPY: 126,000
USD: 783.97
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity
1set(3000pieces)
Stock in Japan
Supplier Stock
63-8117-73 FDC610PZ P-Channel MOSFET, 4.9 A, 30 V PowerTrench, 6-Pin SOT-23 ON Semiconductor FDC610PZ
Features
- PowerTrench® P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:4.9 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:75 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.6 W
- Minimum Operating Temperature:-55 °C
- CODE No.:166-1609
| Order No. | 63-8117-73 | |
|---|---|---|
| Model No. | FDC610PZ | |
| Standard price |
JPY: 126,000
USD: 783.97
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|