63-8117-72 Nexperia PBSS5160DS,115 Dual PNP Transistor, 1 A, 60 V, 6-Pin TSOP PBSS5160DS,115
Features
- Low Saturation Voltage PNP Transistors. A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Spec
- Quantity:1set(3000pieces)
- Transistor Type:PNP
- Maximum DC Collector Current:1 A
- Maximum Collector Emitter Voltage:60 V
- Package Type:TSOP
- Mounting Type:Surface Mount
- Maximum Power Dissipation:700 mW
- Minimum DC Current Gain:100
- Transistor Configuration:Isolated
- Maximum Collector Base Voltage:80 V
- Maximum Emitter Base Voltage:5 V
- Maximum Operating Frequency:185 MHz
- Pin Count:6
- Number of Elements per Chip:2
- Minimum Operating Temperature:-65 °C
- CODE No.:166-1570
| Order No. | 63-8117-72 | |
|---|---|---|
| Model No. | PBSS5160DS,115 | |
| Standard price |
JPY: 97,400
USD: 610.54
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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