63-8116-57 [Discontinued]PMGD780SN,115 Dual N-Channel MOSFET, 490 mA, 60 V, 6-Pin SOT-363 Nexperia PMGD780SN,115
Features
- Dual N-Channel MOSFET, Nexperia
Spec
- Quantity:1bag(20pieces)
- Channel Type:N
- Maximum Continuous Drain Current:490 mA
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:920 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-363 (SC-88)
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:410 mW
- Typical Turn-Off Delay Time:5 ns
- CODE No.:725-8322
| Order No. | 63-8116-57 | |
|---|---|---|
| Model No. | PMGD780SN,115 | |
| Standard price |
JPY: 690
USD: 4.33
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(20pieces) | |
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| Stock in Japan | - | |
![[Discontinued]PMGD780SN,115 Dual N-Channel MOSFET, 490 mA, 60 V, 6-Pin SOT-363 Nexperia PMGD780SN,115](https://aimg.as-1.co.jp/c/63/8116/57/63811536.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)