63-8115-85 PMGD290XN,115 Dual N-Channel MOSFET, 860 mA, 20 V, 6-Pin SOT-363 Nexperia PMGD290XN,115
Features
- Dual N-Channel MOSFET, Nexperia
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:860 mA
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:350 mΩ
- Maximum Gate Threshold Voltage:1.5V
- Minimum Gate Threshold Voltage:0.5V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:SOT-363 (SC-88)
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:410 mW
- Maximum Operating Temperature:+150 °C
- CODE No.:166-0612
| Order No. | 63-8115-85 | |
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| Model No. | PMGD290XN,115 | |
| Standard price |
JPY: 74,800
USD: 465.41
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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