63-8114-99 [Discontinued]PMDT290UNE,115 Dual N-Channel MOSFET, 800 mA, 20 V, 6-Pin SOT-666 Nexperia PMDT290UNE,115
Features
- Dual N-Channel MOSFET, Nexperia
Spec
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:800 mA
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:380 mΩ
- Maximum Gate Threshold Voltage:0.95V
- Minimum Gate Threshold Voltage:0.5V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:SOT-666
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Maximum Power Dissipation:1.09 W
- Typical Input Capacitance @ Vds:55 pF @ 10 V
- CODE No.:165-9828
| Order No. | 63-8114-99 | |
|---|---|---|
| Model No. | PMDT290UNE,115 | |
| Standard price |
JPY: 55,500
USD: 347.90
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(4000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]PMDT290UNE,115 Dual N-Channel MOSFET, 800 mA, 20 V, 6-Pin SOT-666 Nexperia PMDT290UNE,115](https://aimg.as-1.co.jp/c/63/8114/99/63811496.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)