63-8110-72 SI7309DN-T1-E3 P-Channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212 Vishay SI7309DN-T1-E3
FeaturesFeatures class="init">
63-8110-72 SI7309DN-T1-E3 P-Channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212 Vishay SI7309DN-T1-E3 【AXEL GLOBAL】 アズワン
Contact us
Vishay
63-8110-72 SI7309DN-T1-E3 P-Channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212 Vishay SI7309DN-T1-E3
特徴
- P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
仕様
- Quantity:1bag(5pieces)
- Channel Type:P
- Maximum Continuous Drain Current:3.9 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:115 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PowerPAK 1212
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.2 W
- Typical Turn-Off Delay Time:30 ns, 33 ns
- CODE No.:710-3386
-
Order No.
63-8110-72
型番
SI7309DN-T1-E3
標準価格
JPY: 1,400
USD: 8.78
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity
1bag(5pieces)
在庫数
Supplier StockSupplier Stock"init">
63-8110-72 SI7309DN-T1-E3 P-Channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212 Vishay SI7309DN-T1-E3 【AXEL GLOBAL】 アズワン
Contact us
Vishay
63-8110-72 SI7309DN-T1-E3 P-Channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212 Vishay SI7309DN-T1-E3
特徴
- P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
仕様
- Quantity:1bag(5pieces)
- Channel Type:P
- Maximum Continuous Drain Current:3.9 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:115 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PowerPAK 1212
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.2 W
- Typical Turn-Off Delay Time:30 ns, 33 ns
- CODE No.:710-3386
-
アズワン品番
63-8110-72
型番
SI7309DN-T1-E3
標準価格
JPY: 1,400
USD: 8.78
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数
1bag(5pieces)
在庫数
サプライヤ在庫
63-8110-72 SI7309DN-T1-E3 P-Channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212 Vishay SI7309DN-T1-E3
特徴
- P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
仕様
- Quantity:1bag(5pieces)
- Channel Type:P
- Maximum Continuous Drain Current:3.9 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:115 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PowerPAK 1212
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.2 W
- Typical Turn-Off Delay Time:30 ns, 33 ns
- CODE No.:710-3386
| Order No. | 63-8110-72 | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 型番 | SI7309DN-T1-E3 | ||||||||||||||
| 標準価格 |
JPY: 1,400
USD: 8.78
Excange rate 1USD= 159.42JPY
Valid price in Japan |
||||||||||||||
| Quantity | 1bag(5pieces) | ||||||||||||||
| 在庫数 |
|
||||||||||||||
Supplier StockSupplier Stock"init">
63-8110-72 SI7309DN-T1-E3 P-Channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212 Vishay SI7309DN-T1-E3特徴
仕様
| |||||||||||||||
