63-8107-87 [Discontinued]BSS225H6327FTSA1 N-Channel MOSFET, 90 mA, 600 V SIPMOS, 3-Pin SOT-89 Infineon BSS225H6327FTSA1
Features
- Infineon SIPMOS® N-Channel MOSFETs
Spec
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:90 mA
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:45 Ω
- Maximum Gate Threshold Voltage:2.3V
- Minimum Gate Threshold Voltage:1.3V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-89
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Small Signal
- Maximum Power Dissipation:1 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-7515
| Order No. | 63-8107-87 | |
|---|---|---|
| Model No. | BSS225H6327FTSA1 | |
| Standard price |
JPY: 25,400
USD: 158.04
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(1000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]BSS225H6327FTSA1 N-Channel MOSFET, 90 mA, 600 V SIPMOS, 3-Pin SOT-89 Infineon BSS225H6327FTSA1](https://aimg.as-1.co.jp/c/63/8107/87/63810731.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)